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STP120N10F4 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP120N10F4 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 18 page ![]() DocID026168 Rev 1 7/18 STB120N10F4, STP120N10F4 Electrical characteristics 18 Figure 8. Capacitance variations Figure 9. Source-drain diode forward characteristics Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized V(BR)DSS vs temperature VSD 0 40 ISD(A) (V) 20 100 60 80 0.5 0.6 0.7 0.8 0.9 1 TJ=-50°C TJ=150°C TJ=25°C AM15511v1 VGS(th) 0.8 0.6 0.4 0.2 -75 -25 TJ(°C) (norm) 1 75 25 1.2 125 ID=250 µA AM15508v1 RDS(on) 2 1 0 TJ(°C) (norm) 0.5 1.5 2.5 -75 -25 75 25 125 VGS=10 V ID=60 A AM15509v1 V(BR)DSS TJ(°C) (norm) 0.85 0.9 0.95 1 1.05 1.1 1.15 -75 -25 75 25 125 ID=250 µA AM15510v1 |
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