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STP120N10F4 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP120N10F4
Description  N-channel 100 V, 8 mΩ typ., 120 A, STripFET™ DeepGATE™ Power MOSFETs in D2PAK and TO-220 packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP120N10F4 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB120N10F4, STP120N10F4
4/18
DocID026168 Rev 1
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 μA, V
GS
= 0
100
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= 100 V
1
μA
V
DS
= 100 V,T
C
=125 °C
100
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA2
4
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 60 A
8
10
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
7290
-
pF
C
oss
Output capacitance
-
568
-
pF
C
rss
Reverse transfer
capacitance
-
387
-
pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 120 A,
V
GS
= 10 V
(see Figure 14)
-
131
-
nC
Q
gs
Gate-source charge
-
40
-
nC
Q
gd
Gate-drain charge
-
37
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 60 A
R
G
=4.7
Ω V
GS
= 10 V
(see Figure 13)
-32
-
ns
t
r
Rise time
-
116
-
ns
t
d(off)
Turn-off-delay time
V
DD
= 50 V, I
D
= 60 A,
R
G
=4.7
Ω, V
GS
= 10 V
(see Figure 13)
-
111
-
ns
t
f
Fall time
-
79
-
ns



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