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STP120N10F4 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP120N10F4 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. April 2014 DocID026168 Rev 1 1/18 STB120N10F4, STP120N10F4 N-channel 100 V, 8 m Ω typ., 120 A, STripFET™ DeepGATE™ Power MOSFETs in D 2 PAK and TO-220 packages Datasheet − production data Figure 1. Internal schematic diagram Features • N-channel enhancement mode • Very low on-resistance • Low gate charge • 100% avalanche rated Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance. TO-220 1 2 3 TAB 1 3 TAB D PAK 2 Order codes VDS RDS(on) max. ID STB120N10F4 100 V 10 m Ω 120 A STP120N10F4 Table 1. Device summary Order codes Marking Packages Packaging STB120N10F4 120N10F4 D 2 PAK Tape and reel STP120N10F4 TO-220 Tube www.st.com |
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