STP12N120K5 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STH12N120K5-2, STP12N120K5,

STW12N120K5, STWA12N120K5

Electrical ratings

DocID022133 Rev 4

3/21

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

Drain current at TC = 25 °C

Drain current at TC = 100 °C

7.6

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

250

IAR

(2)

Max current during repetitive or single

pulse avalanche

EAS

(3)

Single pulse avalanche energy

215

dv/dt

(4)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(5)

MOSFET dv/dt ruggedness

V/ns

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulse width limited by TJmax.

(3)

Starting TJ = 25 °C, ID=IAS, VDD= 50 V

(4)

ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

(5)

VDS ≤ 960 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

2PAK-2 TO-220

TO-247

TO-247 long leads

Rthj-case Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

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