STP12N120K5 datasheet(4/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STH12N120K5-2, STP12N120K5,

STW12N120K5, STWA12N120K5

4/21

DocID022133 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

1200

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 1200 V

µA

VGS = 0, VDS = 1200 V,

Tc = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 6 A

0.62

0.69

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 100 V,

f = 1 MHz

1370

Coss

Output capacitance

110

Crss

Reverse transfer

capacitance

0.6

Co(tr)

(1)

Equivalent capacitance,

time-related

VGS = 0, VDS = 0 to 960 V

128

Co(er)

(2)

Equivalent capacitance,

energy-related

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 960 V, ID = 12 A

VGS = 10 V

(see Figure 18: "Gate

charge test circuit" )

44.2

Qgs

Gate-source charge

7.3

Qgd

Gate-drain charge

Notes:

(1)

Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

(2)

Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS

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