STGWA35HF60WDI datasheet(6/15 Pages) STMICROELECTRONICS

Part #	STGWA35HF60WDI

Description	35 A, 600 V ultrafast IGBT with low drop diode

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STGW35HF60WDI

6/15

Doc ID 16090 Rev 3

2.1

Electrical characteristics (curves)

Figure 2.

Output characteristics

Figure 3.

Transfer characteristics

Figure 4.

Normalized VCE(sat) vs. IC

Figure 5.

Normalized VCE(sat) vs. temperature

Figure 6.

Normalized breakdown voltage vs.

temperature

Figure 7.

Normalized gate threshold voltage

vs. temperature

100

150

200

V CE (V)

IC (A)

V GE = 15 V

7 V

8 V

9 V

10 V

11 V

V GE = 6 V

AM10147V1

100

150

0369

V GE (V)

(A)

VCE = 10 V

AM10148V1

0.4

0.6

0.8

1.2

1.4

1.6

020

IC (A)

V CE(sat)

(norm)

TJ = -50 ºC

TJ = 25 ºC

TJ = 150 ºC

V GE = 15 V

AM10149V1

0.6

0.8

1.2

1.4

1.6

-50

100

150

TJ (°C)

V CE(sat)

(norm)

10 A

IC = 80 A

IC = 60 A

20 A

IC = 40 A

30 A

IC = 5 A

V GE = 15 V

AM10150V1

0.9

0.95

1.05

1.1

-50

100

150

TJ (°C)

V CES

(norm)

IC = 1 mA

AM10151V1

0.6

0.7

0.8

0.9

1.1

1.2

-50

100

150

TJ (°C)

V GE(th)

(norm)

V GE = V CE

IC = 250 µA

AM10152V1

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