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STGWA35HF60WDI Datasheet(PDF) 1 Page - STMicroelectronics |
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STGWA35HF60WDI Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() August 2011 Doc ID 16090 Rev 3 1/15 15 STGW35HF60WDI 35 A, 600 V ultrafast IGBT with low drop diode Features ■ Improved Eoff at elevated temperature ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Low VF soft recovery antiparallel diode Applications ■ Welding ■ Induction heating ■ Resonant converters Description This ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz). Figure 1. Internal schematic diagram TO-247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STGW35HF60WDI GW35HF60WDI TO-247 Tube STGWA35HF60WDI 35HF60WDI TO-247 long leads www.st.com |
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