STL31N65M5 datasheet(5/17 Pages) STMICROELECTRONICS

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STL31N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td (v)

Voltage delay time

VDD = 400 V, ID = 14 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

-46

tr (v)

Voltage rise time

tf (i)

Current fall time

8.5

tc(off)

Crossing time

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

(1)

The value is rated according to Rthj-case and limited by package.

Source-drain current

ISDM

(1),(2)

Pulse width limited by safe operating area

Source-drain current (pulsed)

VSD

(3)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 15 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 15 A, di/dt= 100 A/µs

VDD = 100 V (see Figure 17)

-290

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 15 A, di/dt= 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17)

-340

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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