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110N10F7 Datasheet(PDF) 6 Page - STMicroelectronics |
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110N10F7 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Electrical characteristics STL110N10F7 6/15 DocID024004 Rev 4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance ID 10 1 0.1 1 VDS(V) 10 (A) 100ms 1s 0.1 Tj=175°C Tpcb=25°C Single pulse 10ms AM16083v1 Single pulse δ=0.5 0.05 0.02 0.01 0.1 0.2 K tp(s) 10 -4 10 -2 10 -1 10 -3 10 -3 10 -2 10 -1 10 Zth = K Rthj-pcb 0 10 1 AM16096v1 ID 80 40 20 0 2 VDS(V) 4 (A) 6 4V 7V VGS= 8, 9, 10V 60 5V 6V 8 100 120 140 160 0 AM16084v1 ID 60 40 20 0 0 4 VGS(V) 8 (A) 2 6 10 30 50 70 VDS=2V AM16085v1 VGS 6 4 2 0 0 40 Qg(nC) (V) 8 60 80 10 VDD=50V ID=21A 12 20 AM16086v1 RDS(on) 4.98 4.96 4.94 2 6 ID(A) (m Ω) 4 8 5.00 VGS=10V 10 12 5.02 5.04 5.06 14 16 18 20 AM16087v1 |
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