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110N10F7 Datasheet(PDF) 7 Page - STMicroelectronics |
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110N10F7 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() DocID024004 Rev 4 7/15 STL110N10F7 Electrical characteristics 15 Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized V(BR)DSS vs temperature C 3000 2000 1000 0 0 20 VDS(V) (pF) 10 30 Ciss Coss Crss 40 50 60 70 80 4000 5000 6000 AM16088v1 VGS(th) 0.7 0.6 0.5 0.4 -75 -25 TJ(°C) (norm) -50 0.8 50 0 25 75 ID=250µA 100 125 150 0.9 1 1.1 1.2 AM16089v1 RDS(on) 1.8 1.2 0.8 0.4 TJ(°C) (norm) 0.6 1 1.4 1.6 2 -75 -25 -50 50 0 25 75 100 125 150 ID=10 A VGS=10 V AM16090v1 VSD 2 6 ISD(A) (V) 4 12 8 10 0.4 0.5 0.6 0.7 TJ=-55°C TJ=175°C TJ=25°C 0.8 0.9 14 16 18 20 AM16092v1 V(BR)DSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.94 0.96 0.98 1 1.02 1.04 ID=1mA AM16091v1 |
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