110N10F7 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL110N10F7

4/15

DocID024004 Rev 4

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 250 µA

100

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 100 V

µA

VGS = 0, VDS = 100 V,

TC=125 °C

µA

IGSS

Gate body leakage current

VDS = 0, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source

on-resistance

VGS= 10 V, ID= 10 A

0.005

0.006

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f=1 MHz,

VGS=0

-5117

Coss

Output capacitance

992

Crss

Reverse transfer

capacitance

-39

Total gate charge

VDD= 50 V, ID = 21 A

VGS =10 V

Figure 14

-72

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=50 V, ID= 10 A,

RG=4.7 Ω, VGS= 10 V

Figure 13

-25

Rise time

td(off)

Turn-off delay time

Fall time

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