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STP315N10F7 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP315N10F7
Description  High avalanche ruggedness
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP315N10F7 Datasheet(HTML) 1 Page - STMicroelectronics

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August 2016
DocID025348 Rev 4
1/13
This is information on a product in full production.
www.st.com
STP315N10F7
Automotive-grade N-
channel 100 V, 2.3 mΩ typ., 180 A
STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)max
ID
STP315N10F7
100 V
2.7 mΩ
180 A
Features
Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packaging
STP315N10F7
315N10F7
TO-220
Tube
AM01475v1_Tab
D(2, TAB)
G(1)
S(3)


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