STP315N10F7 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STP315N10F7

Description	High avalanche ruggedness

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STP315N10F7

Electrical ratings

DocID025348 Rev 4

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate-source voltage

±20

ID(1)

Drain current (continuous) at TC = 25 °C

180

ID(1)

Drain current (continuous) at TC = 100 °C

120

IDM(2)

Drain current (pulsed)

720

PTOT

Total dissipation at TC = 25 °C

315

EAS(3)

Single pulse avalanche energy (TJ = 25 °C, L=0.55 mH, IAS=65 A)

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

Notes:

(1)Current limited by package.

(2)Pulse width limited by safe operating area.

(3)Starting TJ=25°C, ID=60 A, VDD=50 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.48

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

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