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STP315N10F7 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP315N10F7
Description  High avalanche ruggedness
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP315N10F7 Datasheet(HTML) 5 Page - STMicroelectronics

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STP315N10F7
Electrical characteristics
DocID025348 Rev 4
5/13
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain
current
-
180
A
ISDM(1)
Source-drain
current (pulsed)
-
720
A
VSD(2)
Forward on
voltage
VGS = 0 V, ISD= 60 A
-
1.5
V
trr
Reverse recovery
time
ISD = 180 A, di/dt = 100 A/µs
VDD = 80 V, TJ= 150 °C
(see Figure 15: "Test circuit for
inductive load switching and diode
recovery times")
-
85
ns
Qrr
Reverse recovery
charge
-
200
nC
IRRM
Reverse recovery
current
-
4.7
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulse duration = 300μs, duty cycle 1.5%



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