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STQ2LN60K3-AP Datasheet(PDF) 7 Page - STMicroelectronics

Part # STQ2LN60K3-AP
Description  N-channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3 Power MOSFET in a TO-92 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ2LN60K3-AP Datasheet(HTML) 7 Page - STMicroelectronics

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STQ2LN60K3-AP
Electrical characteristics
DocID023499 Rev 3
7/13
Figure 8: Capacitance variations
Figure 9: Source-drain diode forward characteristics
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Normalized V(BR)DSS vs temperature
Figure 13: Output capacitance stored energy
C
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
AM13058v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0
0.1
0.2
0.3
0.4
0.6
0.7
TJ=-50°C
TJ=150°C
TJ=25°C
0.5
0.8
0.9
AM13063v1
VGS(th)
1.00
0.90
0.80
0.70
-75
TJ(°C)
(norm)
-25
1.10
75
25
125
ID=50µA
AM13060v1
RDS(on)
2.0
1.5
1.0
0.5
-75
TJ(°C)
(norm)
-25
75
25
125
2.5
0
ID=1A
VGS=10V
AM13061v1
V(BR)DSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.90
0.95
1.00
1.05
1.10
ID=1mA
AM13062v1
Eoss
0.5
0
0
100
VDS(V)
(µJ)
400
200 300
1
500
600
1.5
AM13059v1



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