STQ2LN60K3-AP datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STQ2LN60K3-AP

4/13

DocID023499 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0 V

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC= 125 °C (1)

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 1 A

4.5

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

235

Coss

Output capacitance

Crss

Reverse transfer

capacitance

3.5

Co(tr)(1)

Eq. capacitance time

VGS = 0 V, VDS = 0 to 480 V

Co(er)(2)

Eq. capacitance energy

Total gate charge

VDD = 480 V, ID = 1 A,

VGS = 0 to 10 V

(see Figure 16: "Test circuit for

gate charge behavior")

Qgs

Gate-source charge

1.8

Qgd

Gate-drain charge

7.7

Gate input resistance

f=1 MHz, ID=0 A

Notes:

(1)Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

(2)Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

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