STQ2LN60K3-AP datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STQ2LN60K3-AP

Description	N-channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3 Power MOSFET in a TO-92 package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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February 2017

DocID023499 Rev 3

1/13

This is information on a product in full production.

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STQ2LN60K3-AP

N-

channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3

Power MOSFET in a TO-92 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max

ID

PTOT

STQ2LN60K3-AP

600 V

4.5 Ω

0.6 A

2.5 W



100% avalanche tested



Extremely high dv/dt capability



Very low intrinsic capacitance



Improved diode reverse recovery

characteristics



Zener-protected

Applications



Switching applications

Description

This MDmesh™ K3 Power MOSFET is the result

of improvements applied to STMicroelectronics’

MDmesh™ technology, combined with a new

optimized vertical structure. This device boasts

an extremely low on-resistance, superior dynamic

performance and high avalanche capability,

rendering it suitable for the most demanding

applications.

Table 1: Device summary

Order code

Marking

Package

Packaging

STQ2LN60K3-AP

2LN60K3

TO-92

Ammopack

1

2

3

TO-92 ammopack

AM15572v1_no_tab

D(2)

G(1)

S(3)

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STQ2LN60K3-AP Datasheet(PDF) 1 Page - STMicroelectronics

STQ2LN60K3-AP Datasheet(HTML) 1 Page - STMicroelectronics

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