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STT7P2UH7 Datasheet(PDF) 7 Page - STMicroelectronics |
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STT7P2UH7 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 13 page ![]() STT7P2UH7 Electrical characteristics DocID025142 Rev 3 7/13 VSD 1 3 ISD(A) (V) 2 6 4 5 0.5 0.6 0.7 0.8 TJ=-55°C TJ=75°C TJ=25°C 0.9 7 8 GIPG210520141134SA Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics C 1000 100 0 8 VDS(V) (pF) 4 12 Ciss Coss Crss 16 GIPG210520141108SA VGS(th) 0.6 0.4 0.2 -75 TJ(°C) (norm) 0.8 75 -25 125 ID=250µ A 25 1 1.2 1.4 GIPG210520141114SA RDS(on) 1.4 0.8 0.4 0.0 TJ(°C) (norm) 0.2 0.6 1.0 1.2 1.6 ID=3.5 A VGS=4.5V -75 75 -25 125 25 GIPG290520141553SA V(BR)DSS TJ(°C) (norm) 0.92 0.96 1 1.04 ID=1m A -75 75 -25 125 25 GIPG210520141132SA |
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