STT7P2UH7 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STT7P2UH7

4/13

DocID025142 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 20 V

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 5 V

± 5

µA

VGS(th)

Gate threshold voltage

VDS = VGS,

ID = 250 µA

0.4

RDS(on)

Static drain-source

on-resistance

VGS= 4.5 V, ID = 3.5 A

0.0195

0.0225

VGS= 2.5 V, ID = 3.5 A

0.02

0.025

VGS= 1.8 V, ID = 3.5 A

0.036

0.043

VGS= 1.5 V, ID = 3.5 A

0.05

0.085

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 16 V,

f = 1 MHz

2390

Coss

Output capacitance

220

Crss

Reverse transfer

capacitance

188

Total gate charge

VDD = 16 V, ID = 7 A,

VGS = 4.5 V

Qgs

Gate-source charge

4.2

Qgd

Gate-drain charge

3.6

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 16 V, ID = 7 A,

RG = 1 Ω, VGS = 4.5 V

12.5

Rise time

30.5

td(off)

Turn-off delay time

128

Fall time

84.5

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