STT7P2UH7

Electrical characteristics

DocID025142 Rev 3

5/13

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

7

A

ISDM

(1)

Source-drain current (pulsed)

-

28

A

VSD

(2)

Forward on voltage

-

1

V

Reverse recovery time

1 A

-

15.8

ns

Reverse recovery charge

-

5.9

nC

Reverse recovery current

-

0.7

A

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulsed: pulse duration = 300 ms, duty cycle 1.5%

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.