STM8S105C4 datasheet(89/121 Pages) STMICROELECTRONICS

89 / 121 page

DocID14771 Rev 15

89/121

STM8S105x4/6

Electrical characteristics

Electromagnetic interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O

ports), the product is monitored in terms of emission. This emission test is in line with the

norm IEC 61967-2 which specifies the board and the loading of each pin.

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD, DLU and LU) using specific measurement methods, the

product is stressed to determine its performance in terms of electrical sensitivity. For more

details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts x (n+1) supply pin). One model

can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A

standard. For more details, refer to the application note AN1181.

1. Data obtained with HSI clock configuration, after applying the hardware recommendations described in

AN2860 (EMC guidelines for STM8S microcontrollers).

Table 48. EMI data

Symbol

Parameter

Conditions

Unit

General conditions

Monitored

frequency band

Max fHSE/fCPU

(1)

1. Data based on characterization results, not tested in production.

8 MHz/

8 MHz

8 MHz/

16 MHz

SEMI

Peak level

VDD 5 V, 

TA 25 °C, 

LQFP48 package.

Conforming to



IEC 61967-2

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

-4.0

EMI level

2.0

1.5

Table 49. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Data based on characterization results, not tested in production

Unit

VESD(HBM)

Electrostatic discharge voltage



(Human body model)

TA 25°C, conforming to

JESD22-A114

2000

VESD(CDM)

Electrostatic discharge voltage



(Charge device model)

TA 25°C, conforming to

SD22-C101

1000

STM8S105C4 Datasheet(PDF) 89 Page - STMicroelectronics

STM8S105C4 Datasheet(HTML) 89 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL