AS4C4M16S datasheet(4/53 Pages) ALSC

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Symbol

Type

Description

CLK

Input

Clock: CLK is driven by the system clock. All SDRAM input signals are sample

on the positive edge of CLK. CLK also increments the internal burst counter and

controls the output registers.

CKE

Input

Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If

CKE goes low synchronously with clock (set-up and hold time same as other

inputs), the internal clock is suspended from the next clock cycle and the state of

output and burst address is frozen as long as the CKE remains low. When all

banks are in the idle state, deactivating the clock controls the entry to the Power

Down and Self Refresh modes. CKE is synchronous except after the device enters

Power Down and Self Refresh modes, where CKE becomes asynchronous until

exiting the same mode. The input buffers, including CLK, are disabled during

Power Down and Self Refresh modes, providing low standby power.

BA0,BA1

Input

Bank Activate: BA0, BA1 input select the bank for operation.

BA1

BA0

Select Bank

BANK #A

BANK #B

BANK #C

BANK #D

A0-A11

Input

Address Inputs: A0-A11 are sampled during the BankActivate command(row

address A0-A11) and Read/Write command (column address A0-A7 with A10

defining Auto Precharge) to select one location out of the 1M available in the

respective bank. During a Precharge command, A10 is sampled to determine if all

banks are to be precharged (A10 = HIGH).

The address inputs also provide the

op-code during a Mode Register Set command.

CS#

Input

Chip Select: CS# enables (sampled LOW) and di

sables (sampled HIGH) the

command decoder. All commands are masked when CS# is sampled HIGH. CS#

provides for external bank selection on systems with multiple banks. It is

considered part of the command code.

RAS#

Input

Row Address Strobe: The RAS# signal defines the operation commands in

conjunction with the CAS# and WE# signals and is latched at the positive edges of

CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH,"

either the BankActivate command or t he Precharge command is selected by the

WE# signal. When the WE# is asserted "HIGH," the BankActivate command is

selected and the bank designated by BA is turned on to the active state. When the

WE# is asserted "LOW," the Precharge command is selected and the bank

designated by BA is switched to the idle state after the precharge operation.

CAS#

Input

Column Address Strobe: The CAS# signal defines the operation commands in

conjunction with the RAS# and WE# signals and is latched at the positive edges of

CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column access

is started by asserting CAS# "LOW." Then, the Read or Write command is

selected by asserting WE# "LOW" or "HIGH."

WE#

Input

Write Enable: The WE# signal defines the operation commands in conjunction

with the RAS# and CAS# signals and is latched at the positive edges of CLK. The

WE# input is used to select the Bank Activate or Precharge command and Read or

Write command.

FEBRUARY 2011

AS4C4M16S

Pin Descriptions

Table 3. Pin Details of AS4C4M16S

Rev2.0 May 2014

AS4C4M16S Datasheet(PDF) 4 Page - Alliance Semiconductor Corporation

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