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P89LPC933FDH Datasheet(PDF) 58 Page - NXP Semiconductors

Part # P89LPC933FDH
Description  8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB/16 kB 3 V byte-erasable Flash with 8-bit ADCs
PDF  75 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

P89LPC933FDH Datasheet(HTML) 58 Page - NXP Semiconductors

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9397 750 15113
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 — 20 June 2005
58 of 75
Philips Semiconductors
P89LPC933/934/935/936
8-bit microcontroller with accelerated two-clock 80C51 core
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper),IDD(idle), and IDD(pd) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4]
See Section 10 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
[5]
This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for
those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with
respect to VSS.
[6]
Pin capacitance is characterized but not tested.
[7]
Measured with port in quasi-bidirectional mode.
[8]
Measured with port in high-impedance mode.
[9]
Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is
highest when VI is approximately 2 V.
11.1 IOH as a function of VOH
RRST(int)
internal pull-up resistance on
pin RST
10
-
30
k
Ω
Vbo
brownout trip voltage
2.4 V < VDD < 3.6 V; with
BOV = 1, BOPD = 0
2.40
-
2.70
V
Vref(bg)
band gap reference voltage
1.11
1.23
1.34
V
TCbg
band gap temperature
coefficient
-
10
20
ppm/
°C
Table 11:
Static characteristics …continued
VDD = 2.4 V to 3.6 V unless otherwise specified.
Tamb = −40 °C to +85 °C for industrial, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit
a. Tamb = 25 °C; VDD = 3.6 V; push-pull mode
b. Tamb = 25 °C; VDD = 2.6 V; push-pull mode
Fig 24. IOH as a function of VOH (typical values)
002aab098
0
10
20
30
40
01
23
4
VOH
IOH
002aab099
0
5
10
15
20
25
0123
VOH
IOH



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