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FDPF2D3N10C Datasheet(PDF) 5 Page - ON Semiconductor

Part # FDPF2D3N10C
Description  N-Channel Shielded Gate PowerTrench MOSFET
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDPF2D3N10C Datasheet(HTML) 5 Page - ON Semiconductor

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4
Figure 7.
0
10 203040 506070 8090 100 110 120
0
2
4
6
8
10
ID = 100 A
VDD = 75 V
VDD = 30 V
Qg, GATE CHARGE (nC)
VDD = 50 V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1
10
100
1000
10000
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs. Drain
to Source Voltage
Figure9.
0.01
0.1
1
10
100
1000
1
10
100
500
TJ = 125 oC
TJ = 25 oC
TJ = 150 oC
t
AV, TIME IN AVALANCHE (ms)
UnclampedInductive
Switching Capability
Figure 10.
25
50
75
100
125
150
175
0
40
80
120
160
200
240
RθJC = 0.7
o
C/W
VGS = 10 V
T
C
, CASE TEMPERATURE (
o
C
)
Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Forward Bias Safe
0.1
1
10
100
400
0.1
1
10
100
1000
2000
100 μs
CURVE BENT TO
MEASURED DATA
10 μs
10 ms
100 ms
1 ms
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 0.7
oC/W
TC = 25
oC
Operating Area for FDP2D3N10C
Figure 12. Forward Bias Safe
0.1
1
10
100
400
0.1
1
10
100
1000
2000
100 μs
CURVE BENT TO
MEASURED DATA
10 μs
10 ms
100 ms
1 ms
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.3
oC/W
TC = 25
oC
Operating Area for FDPF2D3N10C
Typical Characteristics T
J = 25 °C unless otherwise noted.



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