FDPF2D3N10C datasheet(4/9 Pages) ONSEMI

4 / 9 page

www.onsemi.com

Typical Characteristics T

J = 25 °C unless otherwise noted.

Figure 1.

123

120

180

240

300

360

GS = 5.5 V

GS = 5 V

GS = 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 6 V

DS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics

Figure 2.

120

180

240

300

360

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 5 V

ID, DRAIN CURRENT (A)

VGS = 5.5 V

GS = 6 V

VGS = 4.5 V

VGS = 10 V

Normalized On- Resistance

vs.DrainCurrentandGateVoltage

Figure 3. Normalized On- Resistance

-75 -50 -25

100 125 150 175

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

ID = 100 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (

oC)

vs. Junction Temperature

Figure 4.

456789

TJ = 150 oC

ID = 100 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs. Gate to

Source Voltage

Figure 5. Transfer Characteristics

3456

120

180

240

300

360

TJ = 175 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

100

400

TJ = -55 oC

TJ = 25 oC

TJ = 175 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs. Source Current

FDPF2D3N10C Datasheet(PDF) 4 Page - ON Semiconductor

FDPF2D3N10C Datasheet(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL