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JCS10N70H Datasheet(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS10N70H Datasheet(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 10 page ![]() R JCS10N70H 版本:201510E 5/10 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 1 10 1 10 V GS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25 ℃ V DS [V] 2 3 4 5 6 7 8 9 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=20V 25℃ V GS [V] 150℃ 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Notes: 1. 250μs pulse test 2. V GS=0V 25℃ 150℃ V SD [V] On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics 10 -1 10 0 10 1 0.1 1 10 100 1000 10000 Coss Ciss Crss *Note: 1. V GS=0V 2. f=1 MHz C iss=Cgs+Cgd(Cds=shorted) C oss=Cds+Cgd C rss=Cgd V DS Drain-Source Voltage [V] 0 2 4 6 8 10 12 0 10 20 30 40 50 *NOTE:ID=10A V DS=560V V DS=350V V DS=120V Q g Toltal Gate Charge [nC] 0 2 4 6 8 10 12 14 16 18 20 22 1.0 1.5 2.0 Note:T j=25 ℃ V GS=10V V GS=20V I D [A] |
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