Description
The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package.
Features
• GaN on SiC HEMT technology
• Typical pulsed CW performance: 10 µs pulse width,
10% duty cycle, 2690 MHz, 48 V, Doherty configuration
- Efficiency = 64%
- Output power at P3dB = 50 W
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant