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DMN2011UTS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN2011UTS
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2011UTS Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN2011UTS
Document number: DS39579 Rev. 3 - 2
4 of 7
www.diodes.com
July 2017
© Diodes Incorporated
DMN2011UTS
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 1.8V, ID = 5A
V
GS = 2.5V, ID = 7A
V
GS = 4.5V, ID = 7A
0
0.2
0.4
0.6
0.8
1
1.2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS = 0V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
10
20
30
40
50
Q
g (nC)
Figure 11. Gate Charge
V
DS = 10V, ID = 8.5A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on 1*MRP
Board
V
GS = 4.5V
R
DS(ON)
Limited
DC
P
W = 10s
P
W = 1s
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W =
100µs



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