DMN2011UTS

Document number: DS39579 Rev. 3 - 2

1 of 7

www.diodes.com

July 2017

© Diodes Incorporated

DMN2011UTS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

20V

11m

21A

13m

20A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

ideal for high efficiency power management applications.



Battery Management Application



Power Management Functions



DC-DC Converters

Features and Benefits



Low Gate Threshold Voltage



Low On-Resistance



ESD Protected Gate



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)



Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data



Case: TSSOP-8



Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020



Terminals: Finish

– Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208



Weight: 0.039 grams (Approximate)

Part Number

Case

Packaging

DMN2011UTS-13

TSSOP-8

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

TSSOP-8

Equivalent Circuit

Pin1

ESD PROTECTED

Bottom View

Top View

Pin Out

D

S

S

G

D

D

D

S

1

4

8

5

N2011U

WW

YY

D

S

G

Gate Protection

Diode

= Manufacturer’s Marking

N2011U = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 17 = 2017)

WW = Week (01 to 53)

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