DMN2011UTS datasheet(2/7 Pages) DIODES

2 / 7 page

DMN2011UTS

Document number: DS39579 Rev. 3 - 2

2 of 7

www.diodes.com

July 2017

DMN2011UTS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

9.0

7.2

Steady

State

TC = +25°C

TC = +70°C

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

Continuous Source-Drain Diode Current (Note 6)

Pulsed Source-Drain Diode Current (10

μs Pulse, Duty Cycle = 1%)

ISM

Avalanche Current (Note 7) L = 0.1mH

IAS

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

144

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

Thermal Resistance, Junction to Case (Note 6)

Steady State

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

μA

VDS = 16V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.4

—

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

7.2

Ω

VGS = 4.5V, ID = 7A

9.0

VGS = 2.5V, ID = 7A

11.5

VGS = 1.8V, ID = 5A

19.1

VGS = 1.5V, ID = 3A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 8.5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

2,248

—

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

295

—

Reverse Transfer Capacitance

CRSS

—

265

—

Gate Resistance

—

1.5

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

VDS = 10V, ID = 8.5A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

QGS

—

3.5

—

Gate-Drain Charge

QGD

—

5.1

—

Turn-On Delay Time

tD(ON)

—

3.6

—

VDS = 10V, ID = 8.5A

VGS = 4.5V, RG = 1.8Ω

Turn-On Rise Time

—

2.6

—

Turn-Off Delay Time

tD(OFF)

—

21.6

—

Turn-Off Fall Time

—

13.5

—

Reverse Recovery Time

tRR

—

12.8

—

IF = 8.5A, di/dt = 210A/μs

Reverse Recovery Charge

QRR

—

6.9

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN2011UTS Datasheet(PDF) 2 Page - Diodes Incorporated

DMN2011UTS Datasheet(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL