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DMN2011UTS Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN2011UTS
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2011UTS Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN2011UTS
Document number: DS39579 Rev. 3 - 2
3 of 7
www.diodes.com
July 2017
© Diodes Incorporated
DMN2011UTS
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 1.3V
V
GS = 1.2V
V
GS = 1.4V
V
GS = 1.5V
V
GS = 1.6V
V
GS = 1.8V
V
GS = 2.0V
V
GS = 3.0V
V
GS = 4.5V
V
GS = 10V
0
5
10
15
20
25
30
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS = 4.5V
V
GS = 2.5V
V
GS = 1.8V
0
0.01
0.02
0.03
0.04
0
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 7.0A
I
D = 5.0A
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0.011
0.012
0.013
0.014
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
V
GS = 4.5V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 2.5V, ID = 7A
V
GS = 4.5V, ID = 7A
V
GS = 1.8V, ID = 5A



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