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PIC18F4539-E/MLSQTP Datasheet(PDF) 269 Page - Microchip Technology |
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PIC18F4539-E/MLSQTP Datasheet(HTML) 269 Page - Microchip Technology |
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269 / 322 page  2002 Microchip Technology Inc. Preliminary DS30485A-page 267 PIC18FXX39 TABLE 23-2: MEMORY PROGRAMMING REQUIREMENTS DC Characteristics Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Sym Characteristic Min Typ† Max Units Conditions Internal Program Memory Programming Specifications D110 VPP Voltage on MCLR/VPP pin 9.00 — 13.25 V D113 IDDP Supply Current during Programming —— 10 mA Data EEPROM Memory D120 ED Cell Endurance 100K 1M — E/W -40 °C to +85°C D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write VMIN = Minimum operating voltage D122 TDEW Erase/Write Cycle Time — 4 — ms D123 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D123A TRETD Characteristic Retention 100 — — Year 25 °C (Note 1) D124 TREF Number of Total Erase/Write Cycles before Refresh(2) 1M 10M — E/W -40°C to +85°C Program FLASH Memory D130 EP Cell Endurance 10K 100K — E/W -40 °C to +85°C D131 VPR VDD for Read VMIN — 5.5 V VMIN = Minimum operating voltage D132 VIE VDD for Block Erase 4.5 — 5.5 V Using ICSP port D132A VIW VDD for Externally Timed Erase or Write 4.5 — 5.5 V Using ICSP port D132B VPEW VDD for Self-timed Write VMIN — 5.5 V VMIN = Minimum operating voltage D133 TIE ICSP Block Erase Cycle Time — 4 — ms VDD ≥ 4.5V D133A TIW ICSP Erase or Write Cycle Time (externally timed) 1 —— ms VDD ≥ 4.5V D133A TIW Self-timed Write Cycle Time — 2 — ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D134A TRETD Characteristic Retention 100 — — Year 25 °C (Note 1) † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Retention time is valid, provided no other specifications are violated. 2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance. |
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