PIC16F818-ESLASHML datasheet(119/176 Pages) MICROCHIP

119 / 176 page

 2004 Microchip Technology Inc.

DS39598E-page 117

PIC16F818/819

15.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Ambient temperature under bias............................................................................................................ -40°C to +125°C

Storage temperature .............................................................................................................................. -65°C to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR) ................................................... -0.3V to (VDD + 0.3V)

Voltage on VDD with respect to VSS ............................................................................................................ -0.3 to +7.5V

Voltage on MCLR with respect to VSS (Note 2) .............................................................................................-0.3 to +14V

Total power dissipation (Note 1) .................................................................................................................................. 1W

Maximum current out of VSS pin ........................................................................................................................... 200 mA

Maximum current into VDD pin .............................................................................................................................. 200 mA

Input clamp current, IIK (VI < 0 or VI > VDD) .......................................................................................................... ±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD) ................................................................................................... ±20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin .................................................................................................... 25 mA

Maximum current sunk by PORTA ........................................................................................................................ 100 mA

Maximum current sourced by PORTA................................................................................................................... 100 mA

Maximum current sunk by PORTB........................................................................................................................ 100 mA

Maximum current sourced by PORTB .................................................................................................................. 100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD –

∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)

2: Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 k

Ω should be used

to pull MCLR to VDD, rather than tying the pin directly to VDD.

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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