2013. 8. 05

2/6

KF4N60D/I

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

600

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.61

-

V/

℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

1.9

2.5

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

10

-

nC

Gate-Source Charge

-

2.3

-

Gate-Drain Charge

-

4.1

-

Turn-on Delay time

(Note4,5)

-

30

-

ns

Turn-on Rise time

-

30

-

Turn-off Delay time

-

70

-

Turn-off Fall time

-

30

-

Input Capacitance

-

480

-

pF

Output Capacitance

-

54

-

Reverse Transfer Capacitance

-

6.0

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

4

A

Pulsed Source Current

-

-

16

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

㎲

-

300

-

ns

Reverse Recovery Charge

-

1.7

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

001

2

KF4N60

D

1

2

1

001

KF4N60

I

Marking