2013. 8. 05

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SEMICONDUCTOR

TECHNICAL DATA

KF4N60D/I

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

・V

・Drain-Source ON Resistance : R

・Qg(typ) = 10nC

MAXIMUM RATING (Ta=25

℃)

* : Drain current limited by maximum junction temperature.

G

D

S

PIN CONNECTION

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

O

0.1 MAX

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current

3.2

A

2.0

Pulsed (Note1)

12*

Single Pulsed Avalanche Energy

(Note 2)

130

mJ

Repetitive Avalanche Energy

(Note 1)

3.3

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

59.5

W

Derate above 25

℃

0.48

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

2.1

℃/W

Thermal Resistance, Junction-to-

Ambient

110

℃/W

IPAK(1)

123

A

A

B

C

C

D

E

F

FF

G

G

H

H

J

J

L

L

0.96 MAX

K

M

P

M

N

P

N

6.6 0.2

+

_

6.1 0.2

+

_

5.34 0.3

+

_

0.7 0.2

+

_

9.3 0.3

+

_

2.3 0.2

+

_

0.76 0.1

+

_

2.3 0.1

+

_

0.5 0.1

+

_

1.8

0.2

+

_

0.5

0.1

+

_

1.0

0.1

+

_

+

_

1.02

0.3

DIM

MILLIMETERS

1. GATE

2. DRAIN

3. SOURCE

KF4N60D

KF4N60I