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IRGS4630DPbF Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IRGS4630DPbF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
PDF  17 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRGS4630DPbF Datasheet(HTML) 3 Page - Infineon Technologies AG

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IRGB/IB/P/S4630D/EPbF
3
2015-11-23
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max
Units
Conditions
Qg
Total Gate Charge
—
35
—
nC
IC = 18A
Qge
Gate-to-Emitter Charge
—
10
—
VGE = 15V
Qgc
Gate-to-Collector Charge
—
15
—
VCC = 400V
Eon
Turn-On Switching Loss
—
95
—
µJ
IC = 18A, VCC = 400V, VGE=15V
RG = 22
Ω, L = 200µH, LS = 150nH,
TJ = 25°C
Energy losses include tail & diode
reverse recovery 
Eoff
Turn-Off Switching Loss
—
350
—
Etotal
Total Switching Loss
—
445
—
td(on)
Turn-On delay time
—
40
—
ns
tr
Rise time
—
25
—
td(off)
Turn-Off delay time
—
105
—
tf
Fall time
—
25
—
Eon
Turn-On Switching Loss
—
285
—
µJ
IC = 18A, VCC = 400V, VGE=15V
RG = 22
Ω, L = 200µH, LS = 150nH,
TJ = 175°C
Energy losses include tail & diode
reverse recovery 
Eoff
Turn-Off Switching Loss
—
570
—
Etotal
Total Switching Loss
—
855
—
td(on)
Turn-On delay time
—
40
—
ns
tr
Rise time
—
25
—
td(off)
Turn-Off delay time
—
120
—
tf
Fall time
—
40
—
Cies
Input Capacitance
—
1040
—
VGE = 0V
Coes
Output Capacitance
—
87
—
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
—
32
—
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
TJ = 175°C, IC = 72A
FULL SQUARE
VCC = 480V, Vp ≤ 600V
RG = 22Ω, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
5.0
—
—
µs
VCC = 400V, Vp ≤ 600V
RG = 22Ω, VGE = +15V to 0V
Erec
Reverse Recovery Energy of the Diode
—
260
—
µJ
TJ = 175°C
trr
Diode Reverse Recovery Time
—
100
—
ns
VCC = 400V, IF = 18A, VGE = 15V,
Irr
Peak Reverse Recovery Current
—
23
—
A
Rg = 22
Ω, L = 200µH, LS = 150nH
Notes:
Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by Rθ JC.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.



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