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S1M8822X01-R0T0 Datasheet(PDF) 12 Page - Samsung semiconductor

Part # S1M8822X01-R0T0
Description  INTERGER RF/IF DUAL PLL
PDF  22 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1M8822X01-R0T0 Datasheet(HTML) 12 Page - Samsung semiconductor

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S1M8821/22/23
INTERGER RF/IF DUAL PLL
12
ELECTRICAL CHARACTERISTICS (Continued)
(VDD=3.0V, VP=3.0V, Ta =
=== 25°C, Unless otherwise specified )
<For Charge Pump items>
Ia=Charge pump sink current at Vcp=Vp-
∆V,
Ib=Charge pump sink current at Vcp=Vp/2,
Ic=Charge pump sink current at Vcp=
∆V
Id=Charge pump source current at Vcp=Vp-
∆V, Ie=Charge pump source current at Vcp=Vp/2,
If=Charge pump source current at Vcp=
∆V
∆V=Voltage offset from positive(for sink current) and negative(for source current) points from which the charge pump currents
become flat.
* Output Current Sink vs. Source Mismatch = [| Ib|-|Ie|] / [0.5 * {| Ib|+|Ie|}] * 100 (%)
** Output Current Magnitude Variation vs. Temperature =
[| Ib @any temp.| - |Ib @ 25
οC|] / | Ib @ 25οC| * 100 (%) and [|Ie @any temp.| - |Ie @ 25οC|] / |Ie @ 25οC| * 100 (%)
*** Output Current Magnitude Variation vs. Voltage =
[0.5 * {|Ia|-|Ic|}] / [0.5 * {|Ia|+|Ic|}] * 100 (%) and [0.5 * {|Id|-|If|}] / [0.5 * {|Id|+|If|}] * 100 (%)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Serial Data Control
CLOCK Frequency
fCLOCK
10
MHz
CLOCK Pulse Width High
tCWH
50
ns
CLOCK Pulse Width Low
tCWL
50
ns
DATA Set Up Time to CLOCK
Risng Edge
tDS
50
ns
DATA Hold Time after CLOCK
Rising Edge
tDH
10
ns
LE Pulse Width
tLEW
50
ns
CLOCK Rising Edge to LE Rising
Edge
tCLE
50
ns



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