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STM32G47PBY3XXX Datasheet(PDF) 105 Page - STMicroelectronics |
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STM32G47PBY3XXX Datasheet(HTML) 105 Page - STMicroelectronics |
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105 / 229 page ![]() Table 34. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit - VBAT 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD( VBAT) Backup domain supply current RTC disabled 1.8 V 4 17 92 245 600 ---- - nA 2.4 V 5 20 105 280 690 ---- - 3 V 6 24 125 330 805 ---- - 3.6 V 16 54 260 675 1650 ---- - RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 310 315 350 470 ----- - 2.4 V 435 440 500 665 ----- - 3 V 720 815 1050 1350 ----- - 3.6 V 2150 2600 3400 4050 ----- - RTC enabled and clocked by LSE quartz(2) 1.8 V 270 345 455 715 835 ---- - 2.4 V 385 455 650 910 910 ---- - 3 V 525 600 910 1150 1000 ---- - 3.6 V 710 995 1250 1700 1900 ---- - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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