JCS830R-O-R-N-B datasheet(3/5 Pages) DOINGTER

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Continuous Source Current

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lsm

Pulsed Source Current

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trr

Reverse Recovery Time

263

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qrr

Reverse Recovery Charge

1.9

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

VGS = 0 V, IS = 5 A,

dIF / dt = 100 A/µs

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width

≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

246

-1

150

-55

※ Notes :

1. V

DS = 40V

2. 250μ s Pulse Test

GS, Gate-Source Voltage [V]

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

GS = 20V

GS = 10V

※ Note : T

J = 25

℃

D, Drain Current [A]

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom: 5.0 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

JCS830R-O-R-N-B

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