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JCS830R-O-R-N-B Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # JCS830R-O-R-N-B
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

JCS830R-O-R-N-B Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
500
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=500V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2A
---
1.14
1.4
mΩ
VGS=4.5V,ID=0A
---
---
---
GFS
Forward Transconductance
4
VDS=40V, ID=2A
---
5.2
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
480
625
pF
Coss
Output Capacitance
---
80
105
Crss
Reverse Transfer Capacitance
---
15
20
Switching Characteristics
4.5
td(on)
Turn-On Delay Time
VDD=250V, ID=5A,
VGS=10V,RGEN=25Ω
---
12
35
ns
tr
Rise Time
---
46
100
ns
td(off)
Turn-Off Delay Time
---
50
110
ns
tf
Fall Time
---
48
105
ns
Qg
Total Gate Charge
VGS=10V, VDS=400V,
ID=5A
---
18
24
nC
Qgs
Gate-Source
Charge
---
2.2
---
nC
Qgd
Gate-Drain “Miller” Charge
---
9.7
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=1A
---
---
1.4
V
JCS830R-O-R-N-B



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