JCS830R-O-R-N-B datasheet(4/5 Pages) DOINGTER

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4 —

DS = 250V

DS = 100V

DS = 400V

※ Note : I

D = 5A

G, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

200

400

600

800

1000

1200

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

J, Junction Temperature [

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 2 A

J, Junction Temperature [

-2

-1

100 ms

1 ms

µs

10 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

100

125

150

C, Case Temperature [

℃]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

JCS830R-O-R-N-B

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