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UTT100N08ML-TN3-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTT100N08ML-TN3-R
Description  N-Channel MOSFET uses advanced SGT technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT100N08ML-TN3-R Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
LS
Continuous Source Current
VGS\<Vth
---
---
70
A
LSp
Pulsed Source Current
---
---
210
Trr
Reverse Recovery Time
---
68.5
---
NS
Qrr
Reverse Recovery Charge
---
138.3
---
BC
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
IS=25 A,
di/dt=100 A/μs
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
4)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 ℃.
5)
VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃.
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
10 V
7 V
6 V
5 V
5.5 V
4.5 V
T
j = 25 ℃
4 V
3.5 V
V
GS= 3 V
V
DS, Drain-source voltage (V)
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
1000
V
GS, Gate-source voltage(V)
V
DS= 10 V
T
j = 25 ℃
Figure 1, Typ. output characteristics
Figure 2, Typ. transfer characteristics
0
20
40
60
80
1
10
100
1000
10000
f = 100 kHz
V
GS = 0 V
V
DS, Drain-source voltage (V)
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
45
0.0
2.5
5.0
7.5
10.0
I
D = 25 A
V
DS = 50 V
Q
g, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
UTT100N08ML-TN3-R



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