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UTT100N08ML-TN3-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTT100N08ML-TN3-R
Description  N-Channel MOSFET uses advanced SGT technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT100N08ML-TN3-R Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Channel MOSFET uses advanced SGT technology and
www.doingter.cn
—
1 —
Description：
This N-
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=80V,ID=70A,RDS(ON)<8mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
1
70
A
Continuous Drain Current-TC=100℃
---
Pulsed Drain Current
2
210
EAS
Single Pulse Avalanche Energy
5
60
mJ
PD
Power Dissipation
3
125
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
1
℃/W
RƟJA
Thermal Resistance Junction to mbient
4
62
℃/W
D
S
G
UTT100N08ML-TN3-R


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