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UTT100N08ML-TN3-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTT100N08ML-TN3-R
Description  N-Channel MOSFET uses advanced SGT technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT100N08ML-TN3-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
80
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=80V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
---
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=12A
---
6.5
8
mΩ
VGS=4.5V,ID=10A
---
8.5
10
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=40V, VGS=0V,
f=100MHz
---
3056.3
---
pF
Coss
Output Capacitance
---
963.5
---
Crss
Reverse Transfer Capacitance
---
45.9
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=50V,ID=25A,RG=2Ω
VGS=10V
---
20.2
---
ns
tr
Rise Time
---
20.2
---
ns
td(off)
Turn-Off Delay Time
---
53.5
---
ns
tf
Fall Time
---
71.5
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=50V,
ID=25A
---
43.1
---
nC
Qgs
Gate-Source
Charge
---
5.9
---
nC
Qgd
Gate-Drain “Miller” Charge
---
11.6
---
nC
Drain-Source Diode Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=12A
---
---
1.3
V
UTT100N08ML-TN3-R



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