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MCP6V51-E/MS Datasheet(PDF) 28 Page - Microchip Technology |
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MCP6V51-E/MS Datasheet(HTML) 28 Page - Microchip Technology |
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28 / 43 page ![]() MCP6V51 DS20006136A-page 28 2018 Microchip Technology Inc. 4.4.3 RTD SENSOR The ratiometric circuit in Figure 4-13 conditions a two-wire RTD for applications with a limited temperature range. U1 acts as a difference amplifier, with a low-frequency pole. The sensor’s wiring resistance (RW) is corrected in firmware. Failure (open) of the RTD is detected by an out-of-range voltage. FIGURE 4-13: RTD Sensor. RF 10 nF ADC +5V RN 1.0 µF VDD RW RT RB RRTD RG 100Ω 1kΩ 4.99 kΩ 34.8 kΩ 2MΩ 10.0 kΩ U1 MCP6V51 RW 10.0 kΩ RF 2MΩ 10 nF 100 nF + - + - |
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