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IMXRT1160CEC Datasheet(PDF) 75 Page - NXP Semiconductors |
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IMXRT1160CEC Datasheet(HTML) 75 Page - NXP Semiconductors |
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75 / 124 page  Electrical characteristics i.MX RT1160 Crossover Processors Data Sheet for Consumer Products, Rev. 0, 04/2021 NXP Semiconductors 75 Table 75. ADC electrical specifications (1 V ≤ VREFFH < VDD_ANA_18min1 and VADINmax ≤ VREFH)2 1 VDD_ANA_18min = 1.71 V 2 Values in this table are based on design simulations. Symbol Description Min Typ3 3 Typical values assume Temp = 25 °C and fACLK = Max, unless otherwise stated. Typical values are for reference only, and are not tested in production. Max Unit Notes VADIN Input voltage VREFL —VREFH V — VREFH ADC high reference supply input 1.0 1.8 1.89 V — CADIN Input capacitance — 4.5 — pF — RADIN Input resistance — 500 — — RAS Analog source resistance — — 5 K 4 fADCK ADC conversion clock frequency 8 — 88 MHz — Csample Sample cycles 3.5 — 131.5 Cycles 5 Ccompare Fixed compare cycles — 17.5 — Cycles — Cconversion Conversion cycles Cconversion = Csample + Ccompare Cycles — TUE Total unadjusted Error — -14 to -2 — LSB 6 DNL Differential nonlinearity — ±1.2 — LSB 6,7 INL Integral nonlinearity — ±1.2 — LSB 6,7 ENOB Effective number of bits 8 Single-ended mode Avg = 1 — 10.3 — — Avg = 2 — 10.6 — — Avg = 16 — 11.3 — — Differential mode Avg = 1 — 11.2 — — Avg = 2 ———— Avg = 16 ———— SINAD Signal to noise plus distortion SINAD = 6.02 x ENOB + 1.76 dB — EFS Full-scale error — -4 — LSB 6 EZS Zero-scale error — 0.05 — LSB 6 lin_ext_leak External channel leakage current — 30 500 nA — EIL Input leakage error RAS * lin_ext_leak mV — tADCSETUP Setup time — 5 — s — |
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