AND9068/D

http://onsemi.com

3

This is the temperature range in which the device may be

stored, without electrical bias, without reducing the life

expectancy of the device.

The maximum allowable soldering temperature is limited

by the thermal conduction from the leads to the junction and

die attach regions of the device. The maximum lead

temperature is also dependent on the duration for which the

soldering iron is applied to the lead. The maximum time for

application of the heat is specified in the conditions of this

rating.

THERMAL CHARACTERISTICS

Table 2. TABLE OF IGBT AND DIODE THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal resistance junction to case, for IGBT

1.1

°C/W

Thermal resistance junction to case, for Diode

2.4

°C/W

Thermal resistance junction to ambient

60

°C/W

The value for the thermal resistance given in Table 2

represents the steady−state thermal resistance under dc

power conditions, applied to the IGBT. The thermal

resistance is derated for a square power pulse for reference

in designing pulse width modulated applications and is

described in the graph of thermal resistance for varying

pulse width and duty ratio, shown in Figure 2, below.

0.001

0.01

0.1

1

10

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

PULSE TIME (s)

SINGLE PULSE

0.2

0.1

0.05

0.02

0.01

DUTY CYCLE = 0.5

Figure 2. IGBT Transient Thermal Response Curve for Varying Duty Ratio

For a copackaged device such as the NGTB15N60EG the

thermal resistance from the junction to case is specified

separately for the IGBT and the diode.

This is the entire thermal resistance from the silicon

junction−to−ambient.

Electrical Characteristics

Static Characteristics

The static, or dc, electrical characteristics are shown in

Table 3.

Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

STATIC CHARACTERISTIC

Collector−emitter breakdown voltage,

gate−emitter short−circuited

600

−

−

V

Collector−emitter saturation voltage

−

−

1.7

2.1

1.95

2.4

V

Gate−emitter threshold voltage

4.5

6.5

V