© Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 0

1

Publication Order Number:

AND9068/D

AND9068/D

Reading ON Semiconductor

IGBT Datasheets

Abstract

The Insulated Gate Bipolar Transistor is a power switch

well suited for high power applications such as motor

control, UPS and solar inverters, and induction heating. If

the application requirements are well understood, the

correct IGBT can easily be selected from the electrical

properties provided in the manufacturers’ datasheet. This

application note describes the electrical parameters

provided in the ON Semiconductor IGBT datasheet.

Part Number

The part numbering convention for ON Semiconductor

IGBTs is shown in Figure 1. Many of the device ratings and

details are described in the part number and can be

understood using this code.

Figure 1. ON Semiconductor IGBT Part Numbering

Key

Brief

This section provides a description of the device and lists

its key features and typical applications.

Table 1. ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

600

V

Collector current

30

15

A

Pulsed collector current,

60

A

Diode forward current

30

15

A

60

A

Gate−emitter voltage

$20

V

Power dissipation

130

55

W

Short circuit withstand time

v +150°C

10

ms

Operating junction temperat-

ure range

−55 to

+150

°C

Storage temperature range

−55 to

+150

°C

Lead temperature for solder-

ing, 1/8” from case for

5 seconds

260

°C

Stresses exceeding Maximum Ratings may damage the device.

Maximum Ratings are stress ratings only. Functional operation

above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Oper-

ating Conditions may affect device reliability.

Absolute Maximum Ratings

The absolute maximum ratings shown in Table 1 are

typical for an IGBT. This table sets the limits, both electrical

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APPLICATION NOTE