AND9068 datasheet(5/10 Pages) ONSEMI

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AND9068/D

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Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS

Parameter

Unit

Max

Typ

Min

Symbol

Test Conditions

STATIC CHARACTERISTIC

Collector−emitter cut−off current, gate−emitter

short−circuited

VGE = 0 V, VCE = 600 V

VGE = 0 V, VCE = 600 V, TJ = 150°C

ICES

−

200

Gate leakage current, collector−emitter

short−circuited

VGE = 20 V, VCE = 0 V

IGES

−

100

Forward Transconductance

VCE = 20 V, IC = 15 A

gfs

−

10.1

−

Collector−Emitter Breakdown Voltage, V(BR)CES

This is the minimum off−state forward blocking voltage

guaranteed over the operating temperature range. It is

specified with the gate terminal tied to the emitter with a

specified collector current large enough to place the device

into avalanche.

Collector−Emitter Saturation Voltage, VCE(sat)

VCE(sat) is an important figure of merit, since it is directly

related to the conduction losses of the device. This is the

voltage drop from collector to emitter for a specified gate

voltage and collector current. Both a typical value and a

maximum value are specified in the electrical table for both

°C and 150°C.

In addition to the electrical limits in the table, the

datasheet includes a graph describing the dependence of

VCE(sat) on temperature, as shown in Figure 3. The graph

describes the typical part and does not guarantee

performance, but it can be used as a starting point to

determine the VCE(sat) for a given temperature. The curves

are given for VGE = 15 V and various collector currents.

TJ, JUNCTION TEMPERATURE (°C)

IC = 30 A

IC = 15 A

IC = 10 A

IC = 5 A

3.5

2.5

1.5

0.5

−60 −40 −20

60 80 100 120 140160

Figure 3. Graph of the Temperature Dependence of

VCE(sat)

The VCE(sat) values in the electrical parameter table are

only given for VGE = 15 V. If the gate of the IGBT is being

driven by a different voltage, the output characteristics

shown in Figure 4 can also be useful in approximating the

VCE(sat). This chart shows the IC dependence on VCE for

various gate−emitter voltages. The datasheet contains

output characteristics for TA = −40, 25, and 150°C.

VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)

TA = −40°C

VGE = 17 V

15 V

13 V

11 V

9 V

7 V

678

Figure 4. Graph of the Output Characteristics of the

IGBT at 255C

The characteristic curves and typical relationships should

never be substituted for worst case design values. Good

design practices and board−level design evaluation are

critical for a reliable system.

Gate−Emitter Threshold Voltage, VGE(th)

This parameter describes the gate to emitter voltage

required for a specified amount of collector current to flow.

This defines the gate to emitter voltage at which the device

enters the on−state. Typically this test is based on a collector

current flow proportional to the die size.

Collector−Emitter Cut−off−Current, ICES

This specifies the leakage current one can expect in the

off−state forward blocking mode. It is specified at the

maximum rated blocking voltage, VCES with the

gate−to−emittervoltage equal to zero volts. The maximum

allowable value of leakage current occurs at the maximum

junction temperature.

Gate Leakage Current, IGES

The absolute maximum value of gate leakage current is

typically specified at a gate voltage of 20 V while the

collector and emitter are grounded.

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