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and thermal, beyond which the functionality is no longer

guaranteed and at which physical damage may occur. The

absolute maximum rating does not guarantee that the device

will meet the data sheet specifications when it is within that

range. The specific voltage, temperature, current and other

limitations are called out in the Electrical Characteristics

table.

The maximum rated voltage to be applied between the

collector and emitter terminals of the device is specified to

prevent the device from entering avalanche breakdown and

dissipating excessive energy in the device. The avalanche

breakdown voltage varies with temperature and is at its

minimum at low temperature. The breakdown voltage of the

device is designed to meet the minimum voltage rating at

−40

°C.

The maximum collector current is defined as the amount

of current that is allowed to flow continuously into the

The collector current can be stated in the following equation

form:

function of current, the equation must be solved iteratively.

temperature can found in the typical datasheet curves,

discussed later.

It is very important to understand that the absolute

maximum collector current is defined based on very specific

electrical and thermal conditions. The capability of the

IGBT to conduct current without exceeding the absolute

maximum junction temperature is highly dependent on the

thermal performance of the system, including heatsinks and

airflow.

The pulsed collector current describes the peak collector

current pulse above the rated collector current specification

that can flow while remaining below the maximum junction

temperature. The maximum allowable pulsed current in turn

depends on the pulse width, duty cycle and thermal

conditions of the device.

The diode forward current is the maximum continuous

separately.

The pulsed diode current describes the peak diode current

pulse above the rated collector current specification that can

flow while the junction remains below its maximum

temperature. The maximum allowable pulsed current in turn

depends on the pulse width, duty cycle and thermal

conditions of the device.

voltage to be applied from gate to emitter under fault

conditions. The gate−emitter voltage is limited by the gate

oxide material properties and thickness. The oxide is

typically capable of withstanding greater than 80V before

the oxide ruptures, but to ensure reliability over the lifetime

of the device, and to allow for transient overvoltage

conditions in the application, this voltage is limited to well

below the gate rupture voltage.

The maximum power dissipation is determined using the

following equation:

maximum power dissipation is given at case temperatures of

25

°C and 100°C, where the maximum junction temperature

is 150

°C.

The short circuit withstand time describes the ability of

the device to carry high current and sustain high voltage at

the same time. The device must withstand at least the rated

short circuit withstand time with specified voltages applied

from collector to emitter and from gate to emitter. The

collector−emitter voltage specified for the test will vary

based on the minimum blocking voltage capability of the

device. The gate−emitter voltage is usually 15 V. The current

flowing through the device under these conditions can far

exceed the rated current, and is limited by the IGBT forward

transconductance, an electrical parameter described below.

The failure mode during this fault condition is usually

thermal in nature.

This is the junction temperature range in which the device

is guaranteed to operate without physical or electrical

damage or reduced life expectancy.